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F E AT U R E S 1-8 GHz Broad Bandwidth Typical Gain of 8 dB +16 dBm P-out @ 1 dB compression Single Power Supply Input/Output VSWR Typical 1.5:1 20-Pin Hermetic Package Available as Die, Part# DAMB4011D MODEL NO. DAMB51 1 1 Amp lif ie r AMPR +12V * 20 .080 .010 .310 .003 PIN 1 INPUT .125 Dia. .003 Thermal Button .045 .005 .016 .001 19 * 18 N/C 17 * 16 1 N/C 2 15 14 N/C 13 12 11 6 7 N/C 8 9 N/C 10 * .310 .003 3 4 * * OUTPUT * .050 Typ. * 100pF * 5 .020 .002 .005 .001 .027 .004 S-Parameters (typical) -IDD = 99.1 mA Gain vs. Freq. (packaged) 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 FREQ S11 S21 S12 GHz MAG. ANG. MAG. ANG. MAG. ANG. 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 10.5 Note: S22 MAG. ANG. 0.371 0.304 0.247 0.236 0.224 0.168 0.060 0.096 0.166 0.070 0.339 0.206 -60 -86 -135 -177 141 101 70 160 110 -97 152 57 FREQUENCY (GHz) 0.031 0.054 0.052 0.033 0.077 0.141 0.195 0.216 0.113 0.258 0.407 0.069 26 -66 -140 -114 -102 -122 -145 -176 150 -122 176 111 2.398 2.834 2.662 2.528 2.486 2.561 2.683 2.644 2.673 2.473 1.675 2.282 -169 159 115 80 47 14 -26 -68 -116 177 113 52 0.016 0.028 0.041 0.061 0.080 0.097 0.105 0.104 0.112 0.135 0.133 0.180 82 56 35 18 -7 -37 -74 -115 -163 126 60 8 GAIN (dB) 1. Test Conditions: VDD = +12V, TA = 25C. 2. S-Parameters and other data have been measured with the die in a microstrip test fixture as shown in the typical bonding diagram. Input / Output Return Loss vs. Freq. (packaged) 0 ELECTRICAL SPECIFICATIONS TA = 25C, VDD = +12V, RF = 4.0 GHz Parameter INPUT OUTPUT (1) RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 Min 1 Typ 6.8 0.5 5 Max Units 8 8 1.0 GHz dB dB dB dBm dB dBm V mA FREQUENCY (GHz) Frequency of Operation Gain Gain Flatness Noise Figure Output 1 dB Compression Input / Output VSWR Reverse Isolation Output Third-Order Intercept (2) DC Power Supply Supply Current Note: +16 18 10 1.5:1 23 +28 12 100 2:1 15 120 1. Min / Max Values Listed are Production Tested 2. Frequency Separation of Two Signals is 500 KHz DA I C O In d u s t r i e s Rev. ND / Iss. 1 |
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